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91.
92.
X.J. Fan  A.Y. Li  F.G. Bu  H.X. Qiao  J. Du  Z.Z. Xu 《Optik》2008,119(11):540-544
It is shown that in a closed equispaced three-level ladder system, by controlling the relative phase of two applied coherent fields, the conversion from absorption with inversion to lasing without inversion (LWI) can be realized; a large index of the refraction with zero absorption can be gotten; considerable increasing of the spectrum region and value of the LWI gain can be achieved. Our study also reveals that the incoherent pumping will produce a remarkable effect on the phase-dependent properties of the system. Modifying value of the incoherent pumping can change the property of the system from absorption to amplification and enhance significantly LWI gain. If the incoherent pumping is absent, we cannot get any gain for any value of the relative phase.  相似文献   
93.
94.

Background  

In learning and memory tasks, requiring visual spatial memory (VSM), males exhibit superior performance to females (a difference attributed to the hormonal influence of estrogen). This study examined the influence of phytoestrogens (estrogen-like plant compounds) on VSM, utilizing radial arm-maze methods to examine varying aspects of memory. Additionally, brain phytoestrogen, calbindin (CALB), and cyclooxygenase-2 (COX-2) levels were determined.  相似文献   
95.
A one-dimensional disordered system of electrons described by a tight binding model interacting with vibrational degrees of freedom (in harmonic approximation) is considered. A stable configuration is determined by a numerical minimization of the total energy which is based on the adiabatic approximation. The behaviour of the electron density (charge density wave) and the density of states is analysed. The localization properties are investigated as well. In contrast to the corresponding disordered system with vanishing electron-phonon coupling the present model has an energy gap. The formation of the gap and the polaron band is shown to be quite different for both onsite and intersite types of coupling terms. For large disorder, the lattice distortion and the gap disappear if only the vibrational contribution to the intersite coupling is important. They increase, however, if only the vibrational contribution to the site energies is taken into account. In both cases the localization length decreases upon increasing the electron-phonon coupling energy. The results are discussed with respect to low dimensional organic materials and amorphous semiconductors.  相似文献   
96.
We study exactly solvable Dicke-like model describing a system of spatially distributed two-level atoms coupled to a single mode cavity field. We study the model in one excitation sub-space, when the field is supposed to be initially in the vacuum state and just one atom of the atomic sample is excited. We show that depending on the particular spatial distribution of atoms the system under consideration can exhibit super-radiation or subradiation. Moreover, we investigate the dynamics of the two-atom system interacting with the cavity field initially prepared in an arbitrary state. Co-operative effects are discussed in this case.  相似文献   
97.
The adsorption of decylmethylsulfoxide (DEMS) onto carbon black and the effects of temperature, salt (NaCl) and acid (HCl) have been measured.Typical two plateaux type adsorption isotherms were obtained. Applying the two step model of surfactant adsorption on solid/liquld interface and the general adsorption isotherm equation[9]the experimental results were interpreted qualitatively and quantitatively.  相似文献   
98.
大模场单模光纤在高功率激光器、高功率光传输和高灵敏度传感器等领域具有重要意义.设计了一种新型超低损耗大模场单模光纤,包层空气孔由掺氟硅玻璃棒代替,掺氟硅玻璃棒排列呈六重准晶体结构.基于有限元法对光纤的传输特性进行了数值模拟.研究了光纤结构参量变化对模式特性和有效模场面积的影响.结果表明:波长在1064 nm处,有效模场面积高达5197μm2,基模的限制性损耗低于10-5dB/km,解决了大模场与低损耗之间的冲突;在1064—2000 nm波段内,基模与二阶模的限制性损耗相差7个量级,实现单模传输;半径为10 cm时,弯曲损耗小于0.01 dB/m,具有良好的低弯曲损耗特性.此光纤能够提高光纤热损伤阈值,减少接续损耗,全固态结构有效避免了空气孔塌陷,简化制备工艺,对高功率激光传输、光纤激光器和光纤放大器的发展具有重要意义.  相似文献   
99.
徐晖  田晓波  步凯  李清江 《物理学报》2014,63(9):98402-098402
相同测试条件下,纳米钛氧化物忆阻器的导电过程存在不稳定性,制约了对器件瞬态阻抗的精确读取与控制,并影响了器件应用于电路设计的可靠性与稳定性.杂质漂移与隧道势垒的共存是导致上述不稳定性的可能因素,且杂质漂移特性与环境温度密切相关.然而,目前尚无通过控制温度提高忆阻器导电稳定性的具体研究.基于杂质漂移与隧道势垒共存,本文分析了温度与忆阻器导电特性的关联,研究了器件活跃区域厚度及初始掺杂层厚度的改变对临界温度的影响,利用SPICE软件进行了仿真验证并给出结果,得出提高忆阻器导电稳定性的方法有:增大活跃区域厚度、降低初始杂质浓度及保持环境温度稳定且低于临界温度,从而为制备性能稳定的忆阻器及推动器件在实际电路中的应用提供依据.  相似文献   
100.
This paper presents a contact distance dependence analysis scheme and an abinitio calculation application for the electron transfer (ET) reactivity of Co2+OH2/Co3+OH2 reacting pair. The applicability of these schemes and the corresponding models has been discussed. The contact distance (R CoCo) dependence of the relevant quantities has been analyzed. The results indicate that the activation energy from the accurate PES method agrees well with that from the anharmonic potential method, and they are obviously better than that from the harmonic potential method. The pair distribution function varies from 10?2 to 10?5 along withR CoCo changing from 1.20 to 0.35 nm. The coupling matrix element exponentially decays along with the increase ofR CoCo, and the effective electronic coupling requiresR CoCo smaller than 0.75 nm. In the range from 0.50 to 0.75 nm forR CoCo, the corresponding electronic transmission coefficient falls within 1.0—10?6. The local ET rate also exponentially decays along with the increase ofR CoCo due to the electronic factor. Since the contribution from the pair distribution function to the total ET rate is an inverse measure of that from the electronic factor, the variation of the spherically averaged local ET rate along withR CoCo exhibits a parabola with a maximum at 0.50 nm ofR CoCo. This maximum is close to the overall observed ET rate value. For this mono-hydrated transition metal ionic system, the ET rate generally is about 106 L·mol?1·s?1 in gaseous process. Further, since it is impossible to experimentally determine the structures and their PESs of these hydrated systems, especially for the unstable intermediate species,ab initio calculations can play an effective auxiliary role in discussing the ET reactivities of these kinds of reacting systems.  相似文献   
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